Methods for forming pin alloy-semiconductor devices with...

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

Reexamination Certificate

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C438S746000

Reexamination Certificate

active

07064082

ABSTRACT:
The present invention pertains to a more efficient system and method for forming rectifying junction contacts in PIN alloy-semiconductor devices using photoelectrical and chemical etching. The present invention provides a means of creating rectifying junction contacts on alloy-semiconductor devices such as CdTe and CdZnTe, among others. In addition, the present invention also provides a simple and low cost method for revealing wafer surface morphology of alloy-semiconductors, thus providing an efficient and effective means for selecting single grain semiconductor substrates. Further, the present invention provides radiation detectors employing such alloy-semiconductor devices having improved rectifying junctions as the detector element.

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