Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor
Reexamination Certificate
2007-08-21
2007-08-21
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
C257S763000, C257SE23003
Reexamination Certificate
active
10877739
ABSTRACT:
Methods of forming a pattern of filled dielectric material on a substrate by thermal transfer processes are disclosed comprising exposing to heat a thermally imageable donor element comprising a substrate and a transfer layer of dielectric material. The exposure pattern is the image of the desired pattern to be formed on the substrate, such that portions of the layer of dielectric material are transferred onto the substrate where the electronic device is being formed. The filled dielectric material can be patterned onto a gate electrode of a thin film transistor. The pattern dielectric material may also form an insulating layer for interconnects. Donor elements for use in the process are also disclosed. Methods for forming thin film transistors and donor elements for use in the thermal transfer processes are also disclosed.
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Blanchet-Fincher Graciela Beatriz
Visscher Karyn B.
E.I. du Pont de Nemours and Company
Ngo Ngan V.
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