Methods for forming patterns

Details Methods for forming patterns Methods for forming patterns

2011-04-05

2011-04-05

Norton, Nadine G (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S689000, C438S703000, C438S386000, C257SE21249

Reexamination Certificate

active

07919413

ABSTRACT:
A method for forming patterns comprises providing a substrate. A set of seed features is formed over the substrate. At least one bi-layer comprising a first layer followed by a second layer is formed on the set of seed features. The first layer and the second layer above the set of seed features are removed. The first layer and the second layer are anisotropically etched successively at least one time to form an opening next to the set of seed features.

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Choi et al, “Fabrication of Sub-10-nm Silicon Nanowire Arrays by Size Reduction Lithography”, J. Phys. Chem. Bn 2003, 107, pp. 3340-3343, Mar. 20, 2003, American Chemical Society, US.

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