Methods for forming particles from single source precursors

Chemistry of inorganic compounds – Selenium or tellurium or compound thereof

Reexamination Certificate

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C423S509000, C423S511000, C423S561100, C423S566100, C423S566200, C977S813000, C977S824000

Reexamination Certificate

active

08003070

ABSTRACT:
Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

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