Semiconductor device manufacturing: process – Having metal oxide or copper sulfide compound semiconductor...
Reexamination Certificate
2007-03-05
2009-12-08
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Having metal oxide or copper sulfide compound semiconductor...
C438S678000, C257S004000, C365S051000
Reexamination Certificate
active
07629198
ABSTRACT:
Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.
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Chiang Tony
Kumar Nitin
Lang Chi-I
Phatak Prashant B.
Tong Jinhong
Intermolecular, Inc.
Toledo Fernando L
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