Methods for forming multilayer structures

Details Methods for forming multilayer structures Methods for forming multilayer structures

2006-06-13

2009-11-24

Kim, Paul D (Department: 3729)

Metal working

Method of mechanical manufacture

Electrical device making

C029S025410, C029S842000, C029S847000, C029S852000, C257S296000, C257S307000, C257S308000, C361S311000, C361S313000, C438S230000, C438S244000, C438S250000, C438S253000

Reexamination Certificate

active

07621041

ABSTRACT:
The present invention relates to methods of forming multilayer structures and the structures themselves. In one embodiment, a method of forming a multilayer structure comprises: providing a dielectric composition comprising paraelectric filler and polymer wherein the paraelectric filler has a dielectric constant between 50 and 150; applying the dielectric composition to a carrier film thus forming a multilayer film comprising a dielectric layer and carrier film layer; laminating the multilayer film to a circuitized core wherein the dielectric layer of the multilayer film is facing the circuitized core; and removing the carrier film layer from the dielectric layer prior to processing; applying a metallic layer to the dielectric layer wherein the circuitized core, dielectric layer and metallic layer form a planar capacitor; and processing the planar capacitor to form a multilayer structure.

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Takuya Yamamoto, John Andresakis and Fjuo Kuwako, Ultra-Thin Substrate and HI-DK RCC For Use As Embedded Capacitors, Oak Mitsui Technologies LLC, Hoosick Falls, New York, USA, TPCA Forum 2004, pp. 52-57.

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