Methods for forming multi-layer silicon structures

Details Methods for forming multi-layer silicon structures Methods for forming multi-layer silicon structures

2007-09-14

2011-10-25

Mitchell, James M (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having air-gap dielectric

C438S109000, C438S319000

Reexamination Certificate

active

08043931

ABSTRACT:
The embodiments of the present invention are directed to the formation of multi-layer silicon structures by forming and attaching a plurality of individual layers or structures where each of the layers or the structures comprises at least silicon forming a desired pattern. In some embodiments or some applications of some embodiments, at least one of the plurality of individual layers or the structures comprises a plurality of discrete silicon features that are combined together with at least one sacrificial material. In some embodiments or some applications of some embodiments, at least one of the plurality of individual layers or the structures comprises a plurality of discrete silicon features that are supported by a temporary substrate. Still in some embodiments or some applications of some embodiments, at least one of the plurality of individual layers or the structures needs to be machined after it is attached to a receiver such as a substrate or an another layer or structure. The present invention also discloses various fabrication methods for making required silicon layers or structures and attaching methods for forming multi-layer silicon structures.

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