Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Beam leads
Reexamination Certificate
2007-09-18
2007-09-18
Lee, Hsien-Ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Beam leads
C257S738000, C257S751000, C257S779000, C257S781000, C438S107000, C438S612000, C438S666000, C438S667000
Reexamination Certificate
active
11027443
ABSTRACT:
Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces having such interconnects are disclosed herein. One aspect of the invention is directed toward a method for manufacturing a microelectronic workpiece having a plurality of microelectronic dies. The individual dies include an integrated circuit and a terminal electrically coupled to the integrated circuit. In one embodiment, the method includes forming an opening in the workpiece in alignment with the terminal. The opening can be a through-hole extending through the workpiece or a blind hole that extends only partially through the substrate. The method continues by constructing an electrically conductive interconnect in the workpiece by depositing a solder material into at least a portion of the opening and in electrical contact with the terminal. In embodiments that include forming a blind hole, the workpiece can be thinned either before or after forming the hole.
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Hamdorf,
Lee Hsien-Ming
Micro)n Technology, Inc.
Perkins Coie LLP
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