Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor...
Reexamination Certificate
2011-04-19
2011-04-19
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
C257S075000, C257SE21122, C438S406000, C438S458000, C438S424000
Reexamination Certificate
active
07928436
ABSTRACT:
A semiconductor structure that includes a monocrystalline germanium-containing layer, preferably substantially pure germanium, a substrate, and a buried insulator layer separating the germanium-containing layer from the substrate. A porous layer, which may be porous silicon, is formed on a substrate and a germanium-containing layer is formed on the porous silicon layer. The porous layer may be converted to a layer of oxide, which provides the buried insulator layer. Alternatively, the germanium-containing layer may be transferred from the porous layer to an insulating layer on another substrate. After the transfer, the insulating layer is buried between the latter substrate and the germanium-containing layer.
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Cheng Kangguo
Greene Brian Joseph
Mandelman Jack Allan
Green Telly D
International Business Machines - Corporation
Smith Zandra
Wood Herron & Evans LLP
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