Methods for forming fine photoresist patterns

Details Methods for forming fine photoresist patterns Methods for forming fine photoresist patterns

2007-11-27

2007-11-27

Norton, Nadine (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C430S313000, C430S270210, C430S163000, C428S132000

Reexamination Certificate

active

10719083

ABSTRACT:
A method of forming a fine pattern by a tri-layer resist process to overcome a bi-layer resist process is disclosed. When a fine pattern is formed using a silicon photoresist, a gas protection film is coated on a photoresist to prevent exhaustion of silicon gas generated from the photoresist in light examination of high energy. As a result, lens of exposure equipment may be prevented from being contaminated.

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