Methods for forming epitaxial self-aligned calcium silicide cont

Details Methods for forming epitaxial self-aligned calcium silicide cont Methods for forming epitaxial self-aligned calcium silicide cont

1991-09-30

1993-09-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437173, 437200, H01L 2144

Patent

active

052486338

ABSTRACT:
The present invention is a method of forming conductive structures comprising the steps of providing a silicon substrate having a first surface of atomically clean (111) silicon, forming an epitaxial CaF.sub.2 insulating layer on the first surface, the insulating layer having an exposed surface opposing the first surface, positioning a metallic mask on the exposed surface, irradiating a predetermined portion of the exposed surface so as to decompose the insulating layer beneath the predetermined portion to thereby form a workpiece having a metallic Ca layer on the first surface of the (111) silicon substrate, removing the mask, annealing the workpiece at a predetermined temperature so as to form an epitaxial CaSi.sub.2 conductive structure, wherein a plane coincident with the first surface bisects the conductive structure. According to one aspect of the invention, the energetic ion beam can be a beam of ionizing radiation. According to another aspect of the invention, the energetic beam can be energetic ion beam whereby both the conductive structure and an underlying impurity region in the substrate can be formed simultaneously.

REFERENCES:
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patent: 4761386 (1988-08-01), Buynoski
patent: 5075243 (1991-12-01), Nieh et al.
A. Thomas, et al. "Formation of Ca Silicides in Insulating CaF.sub.2 Layers by Ion Implantation" phys. stat. sol. (a) 124, pp. K19-K22, Mar. 16, 1991.
A. Thomas et al. "Ion Beam Lithography of Polycrystalline CaF.sub.2 Films Deposited on Silicon" phys. stat. sol.(a), 116, pp. 735-743 (1989).
"IBM Technical Disclosure Bulletin," vol. No.13, 2 (Jul. 1970).
"IBM Technical Disclosure Bulletin," vol. 22, No. 12 (May 1980).
"Insulating Epitaxial Films of BaF.sub.2, CaF.sub.2, and Ba.sub.x Ca.sub.1-x F.sub.2 Grown by MBE on InP Substrates," Journal of Crystal Growth, vol. 60, No. 2 (Dec. 1980).
"Epitaxial Metal/Insulator/Semiconductor Structure Using CaSi.sub.2 /CaF.sub.2 /Si," Research Reports, No. 302 Jun. 1989.

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