Methods for forming a trench isolation structure with...

Details Methods for forming a trench isolation structure with... Methods for forming a trench isolation structure with...

2006-06-13

2008-10-28

Smith, Bradley K (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S424000, C257SE21549

Reexamination Certificate

active

07442620

ABSTRACT:
A process for forming STI regions comprises performing an In Situ Steam Generation (ISSG) radical conversion on a SiN liner layer within an STI trench in order to expose the top corner of the trench and simultaneously cause rounding the top corner of a liner oxide layer within the trench. The rounding of the liner oxide layer can prevent thinning of a subsequently formed gate oxide.

REFERENCES:
patent: 5989978 (1999-11-01), Peidous
patent: 6180493 (2001-01-01), Chu
patent: 2004/0126990 (2004-07-01), Ohta
patent: 2006/0292894 (2006-12-01), Vellaikal et al.

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