Methods for forming a transistor having an emitter with enhanced

Details Methods for forming a transistor having an emitter with enhanced Methods for forming a transistor having an emitter with enhanced

1993-09-07

1995-03-07

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437186, 437946, H01L 21265

Patent

active

053957741

ABSTRACT:
Methods of forming a carbon containing, minority carrier barrier layer on the surface of a semiconductor, which methods may be used to form barriers between the emitter of a single crystal transistor and a polysilicon layer in electrical contact therewith, and thus transistors with an emitter with enhanced efficiency.

REFERENCES:
patent: 5028973 (1991-07-01), Bajor
patent: 5198263 (1993-03-01), Stafford et al.
patent: 5244535 (1993-09-01), Ohtsuka et al.
patent: 5296094 (1994-03-01), Shan et al.

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