Methods for forming a semiconductor thin film

Details Methods for forming a semiconductor thin film Methods for forming a semiconductor thin film

2005-09-20

2005-09-20

Lee, Hsien Ming (Department: 2823)

Semiconductor device manufacturing: process

Gettering of substrate

C438S473000, C438S486000, C438S487000

Reexamination Certificate

active

06946367

ABSTRACT:
Methods for forming a single crystal semiconductor thin film layer from a non-single crystal layer includes directing a light source having a homogenized intensity distribution and a modulated amplitude towards the non-single crystal layer, and relatively moving the light with respect to the layer wherein the amplitude of the conditioned light is preferably increased in the direction of relative motion of the light to the layer. Preferred methods also include multiple light exposures in overlapping series to form ribbon-shaped single crystal regions, and providing a low temperature point in the semiconductor layer to generate a starting location for single crystalization.

REFERENCES:
patent: 6528397 (2003-03-01), Taketomi et al.
patent: 1047119 (2000-10-01), None
“Advanced Excimer-Laser Annealing Process for Quasi Single-Crystal Silicon Thin-Film Devices,” by Matsakiyo Matsumura, Chang-Ho Oh, published inThin Solid Films, 337 (1999) pp 123-128, copyright text 1999 Elsevier Science S.A.
“Preparation of Giant-Grain Seed Layer for Poly-Silicon Thin-Film Solar Cells,” by Wen-Chang Yeh and Masakiyo Matsumura, published in Jpn. J. Appl. Phys. vol. 38 (1999) pp. L110-L112, Part 2, No. 2A, Feb. 1, 1999, copyright text 1998 Publication Board, Japanese Journal of Applied Physics.
“Preparation of Position-Controlled Crystal-Silicon Island Arrays by Means of Excimer-Laser Annealing,” by Chang-Ho Oh and Masakiyo Matsumura, published in Jpn. J. Appl. Phys. vol. 37 (1998) pp. 5474-5479, copyright text 1998 Publication Board, Japanese Journal of Applied Physics.
“A Projection-Type Excimer-Laser Crystallization System for Ultra-Large Grain Growth of Si Thin-Films,” by Chang-Ho Oh, Mitsuru Nakata and Masakiyo Matsumura, published in Mat. Res. Soc. Symp. Proc. vol. 558, pp. q87-192, Copyright text 2000 Materials Research Society.

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