Methods for forming a semiconductor structure

Details Methods for forming a semiconductor structure Methods for forming a semiconductor structure

2007-10-02

2007-10-02

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S406000, C257SE21122

Reexamination Certificate

active

11059122

ABSTRACT:
Methods for forming a semiconductor structure are described. In an embodiment, the technique includes providing a donor wafer having a first semiconductor layer and a second semiconductor layer on the first layer and having a free surface, implanting atomic species through the free surface of the second layer to form a zone of weakness zone in the first layer, and bonding the free surface of the second layer to a host wafer. The method also includes supplying energy to detach at the zone of weakness a semiconductor structure comprising the host wafer, the second layer and a portion of the first layer, conducting a bond strengthening step on the structure after detachment at a temperature of less than about 800° C. to improve the strength of the bond between the second layer and the host wafer, and selectively etching the first layer portion to remove it from the structure and to expose a surface of the second layer. The implanting step includes implantation parameters chosen to minimize surface roughness resulting from detachment at the zone of weakness.

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