Methods for forming a ferroelectric layer and capacitor and...

Details Methods for forming a ferroelectric layer and capacitor and... Methods for forming a ferroelectric layer and capacitor and...

2007-12-25

2007-12-25

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257SE21208, C257SE21664

Reexamination Certificate

active

10898564

ABSTRACT:
Metal organic chemical vapor deposition (MOCVD) may be utilized in methods of forming an (111) oriented PZT ferroelectric layer at a lower temperature, a ferroelectric capacitor and methods of fabricating, and a ferroelectric memory device using the same may be provided. Using the metal organic chemical vapor deposition, ferroelectric layers, capacitors, and memory devices, which may be fabricated and may have (111) preferred oriented crystal growth.

REFERENCES:
patent: 6278152 (2001-08-01), Hieda et al.
patent: 6656748 (2003-12-01), Hall et al.
patent: 6825126 (2004-11-01), Asai et al.

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