Methods for forming a contact in a semiconductor device

Details Methods for forming a contact in a semiconductor device Methods for forming a contact in a semiconductor device

1996-03-04

1997-07-15

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437195, 437203, 437228, 1566441, 1566521, H01L 2144

Patent

active

056482981

ABSTRACT:
A method of forming a contact of a semiconductor device is disclosed. An insulating film and a metal oxide film having different etch rates are deposited on a semiconductor substrate. A photoresist pattern is formed so that the width thereof is the minimum line width which can be obtained using a conventional exposure equipment. When the insulating film and metal oxide film are etched using the photoresist pattern, since the etch rates are different from one another, a contact hole is formed than that is a finer than that at a conventional contact hole. Accordingly, a fine contact can be manufactured without purchasing additional equipment, and can be applied for semiconductor devices with higher integration.

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