Semiconductor device manufacturing: process – Manufacture of electrical device controlled printhead
Reexamination Certificate
2007-12-25
2007-12-25
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Manufacture of electrical device controlled printhead
C438S407000, C438S423000, C438S514000, C257SE21563
Reexamination Certificate
active
11454012
ABSTRACT:
A method is provided for fabricating thin membrane structures in localized surface regions of a single crystal substrate. In the method, ion implantation masks are patterned on the surface of the single crystal substrate with openings that define the localized surface regions. Foreign ions are implanted through the openings into the single crystal substrate to modify the chemical and/or structural properties of subsurface layers at predetermined depths underneath super layers of material. These subsurface layers are removed by selective etching. The removal of the subsurface layers leaves the super layers of material intact as membrane structures on top of openings or channels corresponding to the space of the removed subsurface layers. At least one portion or end of a membrane structure remains attached to the single crystal substrate.
REFERENCES:
patent: 6120592 (2000-09-01), Brault et al.
patent: 6503321 (2003-01-01), Levy et al.
patent: 6540827 (2003-04-01), Levy et al.
patent: 6641662 (2003-11-01), Radojevic et al.
patent: 2004/0180519 (2004-09-01), Schwarzenbach et al.
Izuhara Tomoyuki
Osgood, Jr. Richard M.
Lebentritt Michael
Lee Kyoung
The Trustees of Columbia University in the City of New York
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