Methods for fabrication of bipolar device having high ratio of e

Details Methods for fabrication of bipolar device having high ratio of e Methods for fabrication of bipolar device having high ratio of e

1996-06-13

1998-03-31

Graybill, David

Fishing, trapping, and vermin destroying

437 26, 437 33, 437162, 148DIG10, 148DIG11, 257514, 257518, H01L 21265

Patent

active

057337918

ABSTRACT:
A bipolar transistor is provided whose emitter surrounds the base. The transistor has in some embodiments a high ratio of the emitter area to the base area and low collector and emitter resistances. Further, a transistor is provided in which a collector contact region is surrounded by the base. Consequently, a low collector resistance is obtained in some embodiments.

REFERENCES:
patent: 3988766 (1976-10-01), Anthony et al.
patent: 4042947 (1977-08-01), Chu
patent: 4804634 (1989-02-01), Krishna et al.
patent: 4916083 (1990-04-01), Monkowski et al.
patent: 5010026 (1991-04-01), Gomi
patent: 5024971 (1991-06-01), Baker et al.
patent: 5039624 (1991-08-01), Kadota
patent: 5055418 (1991-10-01), Vora et al.
patent: 5059546 (1991-10-01), Havemann
patent: 5077227 (1991-12-01), Kameyama et al.
patent: 5109263 (1992-04-01), Nanba et al.
patent: 5111272 (1992-05-01), Miyashita et al.
patent: 5139961 (1992-08-01), Solheim et al.
patent: 5185276 (1993-02-01), Chen et al.
patent: 5198373 (1993-03-01), Yoshino
patent: 5200347 (1993-04-01), Wang et al.
patent: 5204277 (1993-04-01), Somero et al.
patent: 5208169 (1993-05-01), Shah
patent: 5237200 (1993-08-01), Nanba et al.
patent: 5409843 (1995-04-01), Yamauchi et al.
Ning, T. H., `IBM Technical Disclosure Bulletin`, vol. 21, No. 2, Jul. 1978, pp. 846-849.
R. M. Warner, Jr., J. N. Fordemwalt, Integrated Circuits (McGraw-Hill, 1965), pp. 107-109.
E. S. Yang, Fundamentals of Semiconductor Devices (McGraw-Hill, 1978), pp. 241-243.
E. S. Yang, Microelectronic Devices (McGraw-Hill, 1988), pp. 134-135.
R. S. Muller, T. I. Kamins, Device Electronics for Integrated Circuits (Second Edition 1986), pp. 331-335.
A. Iranmanesh, M. Biswal and B. Bastani, Total System Solution with Advanced BiCMOS, Solid State Technology, Jul. 1992, pp. 37-40.
H. F. Cooke, Microwave Transistors: Theory and Design, pp. 68-86, reprinted from Proc. IEEE, vol. 59, Aug. 1971, pp. 1163-1181.
G. Gonzalez, "Microwave transistor amplifier" (Prentice-Hall 1984), pp. 31-34.

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