Methods for fabricating three dimensional anisotropic thin...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material

Reexamination Certificate

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C438S605000, C438S679000, C438S680000, C438S681000, C438S761000

Reexamination Certificate

active

06998331

ABSTRACT:
A three dimensional structure comprising at least two materials capable of being deposited by vapor deposition. The structure is fabricated by the controlled vapor deposition of the materials onto a substrate.

REFERENCES:
patent: 4226082 (1980-10-01), Nishida
patent: 4544468 (1985-10-01), Munz et al.
patent: 4591418 (1986-05-01), Snyder
patent: 4619865 (1986-10-01), Keem et al.
patent: 4882022 (1989-11-01), Hoffman et al.
patent: 5510012 (1996-04-01), Schulz et al.
patent: 5888885 (1999-03-01), Xie
patent: 6541392 (2003-04-01), Avniel et al.
patent: 2002/0168483 (2002-11-01), Nakase et al.

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