Methods for fabricating residue-free contact openings

Details Methods for fabricating residue-free contact openings Methods for fabricating residue-free contact openings

2000-08-25

2008-12-30

Menz, Douglas M (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S906000, C216S002000, C134S028000, C134S902000, C257SE21228

Reexamination Certificate

active

07470631

ABSTRACT:
A two-step via cleaning process that removes metal polymer and oxide polymer residues from a via with substantially no damage to the via or underlying structures on a semiconductor substrate. The via is formed through a dielectric layer and a barrier layer that are disposed over a metal-containing trace, pad, or other such circuitry, wherein the metal-containing trace, pad, or other circuitry is disposed on a semiconductor substrate. When such a via is formed, the sidewalls of the via are coated with a residue layer. The residue layer generally has a distinct oxide polymer component and a distinct metal polymer component. The two-step cleaning process comprises first subjecting the residue layer to a nitric acid dip that removes the metal polymer component to expose the oxide polymer component. The oxide polymer component is then subjected to a phosphoric acid dip that removes the oxide polymer component. The oxide polymer and metal polymer residues may also be removed during the fabrication of the via by removing them directly after their respective formations.

REFERENCES:
patent: 3577045 (1971-05-01), Engler et al.
patent: 3635774 (1972-01-01), Ohta
patent: 3654526 (1972-04-01), Cunningham et al.
patent: 3867218 (1975-02-01), Henry
patent: 4080619 (1978-03-01), Suzuki
patent: 4253888 (1981-03-01), Kikuchi
patent: 4289845 (1981-09-01), Bowden et al.
patent: 4319069 (1982-03-01), Tyan
patent: 4415606 (1983-11-01), Cynkar et al.
patent: 4417385 (1983-11-01), Temple
patent: 4495026 (1985-01-01), Herberg
patent: 4700465 (1987-10-01), Sirkin
patent: 4900695 (1990-02-01), Takahashi et al.
patent: 4943539 (1990-07-01), Wilson et al.
patent: 5017513 (1991-05-01), Takeuchi
patent: 5176790 (1993-01-01), Arleo et al.
patent: 5256245 (1993-10-01), Keller et al.
patent: 5269879 (1993-12-01), Rhoades et al.
patent: 5302547 (1994-04-01), Wojnarowski et al.
patent: 5332469 (1994-07-01), Mastrangelo
patent: 5368687 (1994-11-01), Sandhu et al.
patent: 5376235 (1994-12-01), Langley
patent: 5376573 (1994-12-01), Richart et al.
patent: 5420076 (1995-05-01), Lee et al.
patent: 5447613 (1995-09-01), Ouellet
patent: 5470790 (1995-11-01), Myers et al.
patent: 5486235 (1996-01-01), Ye et al.
patent: 5508229 (1996-04-01), Baker
patent: 5511020 (1996-04-01), Hu et al.
patent: 5514247 (1996-05-01), Shan et al.
patent: 5563099 (1996-10-01), Grass
patent: 5607543 (1997-03-01), Eisenberg et al.
patent: 5619071 (1997-04-01), Myers et al.
patent: 5622787 (1997-04-01), Sakata et al.
patent: 5628871 (1997-05-01), Shinagawa
patent: 5650041 (1997-07-01), Gotoh et al.
patent: 5661083 (1997-08-01), Chen et al.
patent: 5872061 (1999-02-01), Lee et al.
patent: 5883001 (1999-03-01), Jin et al.
patent: 5888309 (1999-03-01), Yu
patent: 5943572 (1999-08-01), Krautschneider
patent: 5970376 (1999-10-01), Chen
patent: 6020254 (2000-02-01), Taguwa
patent: 6037664 (2000-03-01), Zhao et al.
patent: 6051505 (2000-04-01), Chu et al.
patent: 6136767 (2000-10-01), Hineman et al.
patent: 6228563 (2001-05-01), Starov et al.
patent: 6384001 (2002-05-01), Hineman et al.
patent: 6576547 (2003-06-01), Li
patent: 6747359 (2004-06-01), Li
patent: 6828228 (2004-12-01), Li
patent: 002754861 (1978-07-01), None
patent: 05-41485 (1993-02-01), None
patent: WO 97/03469 (1997-01-01), None
patent: WO 9703469 (1997-01-01), None
Yamada Osamu (JP 05-41485), Feb. 1993, Translation.
Burkhan, D.C., et al “Aqueous Cleaning Processes.” Chapter 3. Handbook of Semiconductor Wafer Cleaning Technology, Ed. Werner Kern. Werner Kern Associates: East Windsor, New Jersey, (1983): pp. 109-151.

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