Semiconductor device manufacturing: process – Making device array and selectively interconnecting – With electrical circuit layout
Reexamination Certificate
2005-11-03
2009-02-24
Menz, Douglas M (Department: 2891)
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
With electrical circuit layout
C438S102000, C257S004000, C257SE21645, C257SE31029
Reexamination Certificate
active
07494849
ABSTRACT:
Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. This structure allows an application in which an electrical connection can be created between the two active terminals, with the control of the connection being effected using a separate terminal or terminals. Accordingly, the resistance of the heater element can be increased independently from the resistance of the path between the two active terminals. This allows the use of smaller heater elements thus requiring less current to create the same amount of Joule heating per unit area. The resistance of the heating element does not impact the total resistance of the phase change device. The programming control can be placed outside of the main signal path through the phase change device, reducing the impact of the associated capacitance and resistance of the device.
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Chan Vei-Han
Derharcobian Narbeh
Kordus, II Louis Charles
Oliva Antonietta
Stewart, Jr. Thomas E.
Cswitch Inc.
Fulk Steven J.
Menz Douglas M
Patent Law Professionals
Winters William E.
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