Semiconductor device manufacturing: process – Having diamond semiconductor component
Patent
1996-08-16
1999-05-25
Dutton, Brian
Semiconductor device manufacturing: process
Having diamond semiconductor component
29 2535, H04R 1700
Patent
active
059077689
ABSTRACT:
A method for fabricating a microelectronic structure includes the steps of forming a semiconductor island on a substrate and forming a filler material on the substrate and surrounding the semiconductor island. The semiconductor island includes a first semiconductor material and has a planar island surface opposite the substrate. The filler material includes a second semiconductor material and has a planar single crystal surface adjacent the planar island surface opposite the substrate so that the planar island surface and the planar single crystal surface together define a smooth planar surface. The first semiconductor material can be diamond, and the second semiconductor material can be silicon. In addition, a microelectronic circuit can be formed on the filler material.
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Dreifus David L.
Malta Dean M.
Dutton Brian
Kobe Steel USA Inc.
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