Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-04-17
2007-04-17
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S240000, C257SE21665
Reexamination Certificate
active
11039301
ABSTRACT:
Methods for patterning a magnetic cell junction and a topography used for and/or resulting from such methods are provided. In particular, a method is provided which includes etching portions of a topography adjacent to a patterned photoresist layer to a level within a cap film of the topography, removing etch residues from the topography and subsequently etching the remaining portions of the cap film to expose an uppermost magnetic layer. Another method is provided which includes patterning a dielectric mask layer above a patterned upper portion of a magnetic cell junction and ion milling a lower portion of the magnetic cell junction in alignment with the mask layer. An exemplary topography which may result and/or may be used for such methods includes a stack of layers having a dual layer cap film arranged above at least two magnetic layers spaced apart by a tunneling layer.
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U.S. Appl. No. 10/979,072, filed Oct. 29, 2004.
Chen Eugene Y.
Choi Chang Ju
Chung Helen L.
Geha Sam
Kula Witold
Daffer Kevin L.
Daffer McDaniel LLP
Lettang Mollie E.
Silicon Magnetic Systems
Tsai H. Jey
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