Methods for fabricating device features having small dimensions

Details Methods for fabricating device features having small dimensions Methods for fabricating device features having small dimensions

2007-10-15

2009-10-13

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C216S041000, C257SE21214, C257SE21218, C257SE21248, C438S706000

Reexamination Certificate

active

07601645

ABSTRACT:
Methods for fabricating devices having small feature sizes are provided. In an exemplary embodiment, a method comprises forming a patterned first mask layer overlying a subject material layer and isotropically etching the patterned first mask layer. A second masking layer is deposited overlying the patterned first mask layer and the isotropically-etched patterned first mask layer is exposed. The isotropically-etched patterned first mask layer is removed and the subject material layer is etched to form a feature therein.

REFERENCES:
patent: 6372653 (2002-04-01), Lou et al.
patent: 6497996 (2002-12-01), Naya et al.
patent: 6814879 (2004-11-01), Shibata
patent: 6919168 (2005-07-01), Hwang et al.
patent: 2006/0240639 (2006-10-01), Akiyama
patent: 2007/0020936 (2007-01-01), Abatchev et al.

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