Methods for fabricating contacts to pillar structures in...

Details Methods for fabricating contacts to pillar structures in... Methods for fabricating contacts to pillar structures in...

2011-08-30

2011-08-30

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S618000, C438S637000, C365S164000

Reexamination Certificate

active

08008095

ABSTRACT:
A pillar structure that is contacted by a vertical contact is formed in an integrated circuit. A hard mask is formed and utilized to pattern a least a portion of the pillar structure. The hard mask comprises carbon. Subsequently, the hard mask is removed. A conductive material is then deposited in a region previously occupied by the hard mask to form the vertical contact. The hard mask may, for example, comprise diamond-like carbon. The pillar structure may have a width or diameter less than about 100 nanometers.

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