Methods for fabricating compound material wafers

Details Methods for fabricating compound material wafers Methods for fabricating compound material wafers

2009-03-31

2010-12-14

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S406000, C438S455000, C438S459000, C257SE21568, C257SE21122

Reexamination Certificate

active

07851330

ABSTRACT:
Methods are disclosed for preparing a reconditioned donor substrate by providing a remainder substrate from a donor substrate wherein the remainder substrate has a detachment surface where a transfer layer was detached and an opposite surface; and depositing an additional layer onto the opposite surface of the remainder substrate to increase its thickness and to form a reconditioned substrate. The reconditioned substrate is recycled as a donor substrate for fabricating compound material wafers.

REFERENCES:
patent: 4471689 (1984-09-01), Piana
patent: 4886674 (1989-12-01), Seward et al.
patent: 5854123 (1998-12-01), Sato et al.
patent: 6127199 (2000-10-01), Inoue et al.
patent: 6223650 (2001-05-01), Stuck
patent: 6225650 (2001-05-01), Tadatomo et al.
patent: 6246068 (2001-06-01), Sato et al.
patent: 6251754 (2001-06-01), Ohshima et al.
patent: 6258698 (2001-07-01), Iwasaki et al.
patent: 6284629 (2001-09-01), Yokokawa et al.
patent: 6328796 (2001-12-01), Kub et al.
patent: 6372608 (2002-04-01), Shimoda et al.
patent: 6391799 (2002-05-01), Di Cioccio
patent: 6468923 (2002-10-01), Yonehara et al.
patent: 6475882 (2002-11-01), Sakai et al.
patent: 6497763 (2002-12-01), Kub et al.
patent: 6596610 (2003-07-01), Kuwabara et al.
patent: 6613678 (2003-09-01), Sakaguchi et al.
patent: 6624047 (2003-09-01), Sakaguchi et al.
patent: RE38466 (2004-03-01), Inoue et al.
patent: 6716722 (2004-04-01), Furihata et al.
patent: 6740345 (2004-05-01), Cai
patent: 6794276 (2004-09-01), Letertre et al.
patent: 6867067 (2005-03-01), Ghyselen et al.
patent: 7186628 (2007-03-01), Nakano
patent: 2001/0019153 (2001-09-01), Sato et al.
patent: 2002/0146893 (2002-10-01), Shimoda et al.
patent: 2003/0010280 (2003-01-01), Sugihara et al.
patent: 2003/0087503 (2003-05-01), Sakaguchi et al.
patent: 2003/0119217 (2003-06-01), Plossl et al.
patent: 2003/0153163 (2003-08-01), Letertre et al.
patent: 2003/0224582 (2003-12-01), Shimoda et al.
patent: 2004/0056254 (2004-03-01), Bader et al.
patent: 2004/0152284 (2004-08-01), Ghyselen et al.
patent: 2004/0185638 (2004-09-01), Kakizaki et al.
patent: 2004/0219762 (2004-11-01), Shimoda et al.
patent: 0 767 486 (1997-04-01), None
patent: 1 026 728 (2000-08-01), None
patent: 1 039 513 (2000-09-01), None
patent: 1 324 385 (2003-07-01), None
patent: 1 471 578 (2004-10-01), None
patent: 5-275332 (1993-10-01), None
patent: 2002373864 (2002-12-01), None
patent: WO 2004/019404 (2004-03-01), None
Search Report, application No. EP 04 29 2655, dated Apr. 13, 2005.
European Search Report, application No. EP 08007333, dated Nov. 25, 2009.
E. Frayssinet et al., “High Electron Mobility In AIGaN/GaN Heterostructures Grown On Bulk GaN Substrates”, Applied Physics Letters, American Institute Of Physics, vol. 77, No. 16, pp. 2551-2553 (2000).
M. Leszczynski et al., “GaN Homoepitaxial Layers Grown by Metal Organic Chemical Vapor Deposition”, Applied Physics Letters, American Institute Of Physics, vol. 75, No. 9, pp. 1276-1278 (1999).

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