Methods for fabricating CMOS-compatible lateral bipolar...

Details Methods for fabricating CMOS-compatible lateral bipolar... Methods for fabricating CMOS-compatible lateral bipolar...

2005-03-01

2005-03-01

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Complementary bipolar transistors

C438S327000, C438S366000

Reexamination Certificate

active

06861325

ABSTRACT:
A method for fabricating a lateral bipolar junction transistor in an active area of a substrate includes forming a base structure directly on a central portion of the active area without a gate oxide layer being formed on the substrate. The method also includes implanting a first type of dopant into the active area for forming an emitter region and a collector region, and forming contacts and interconnects for the base structure and emitter and collector regions.

REFERENCES:
patent: 5714397 (1998-02-01), Klose
patent: 5952706 (1999-09-01), Bashir

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