Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2007-06-26
2007-06-26
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S457000, C438S458000, C438S459000
Reexamination Certificate
active
10922997
ABSTRACT:
A method is provided for fabricating a substrate for optics, electronics, or opto-electronics. This method includes the steps of implanting atomic species into a face of a source substrate to form a weakened zone therein corresponding to the depth of penetration of the atomic species; transferring the seed layer on to a support substrate by bonding a face of the support substrate to the face of the source substrate and detaching the seed layer from the source substrate; depositing a working layer on the seed layer to form a composite substrate comprising the support substrate, seed layer and working layer; and detaching the seed layer and the working layer from the support substrate to form a substrate. Advantageously, the support substrate comprises a material having a thermal expansion value of about 0.7 to 3 times the coefficient value of the working layer, and the seed layer includes a crystal lattice parameter sufficient for the epitaxial growth of the working layer onto the seed layer such that the working layer has a dislocation concentration of less than about 107/cm2.
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Ghyselen Bruno
Letertre Fabrice
Duong Khanh
Wilczewski M.
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