Methods for fabricating a CMOS image sensor

Details Methods for fabricating a CMOS image sensor Methods for fabricating a CMOS image sensor

2008-12-29

2010-10-05

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S070000

Reexamination Certificate

active

07807493

ABSTRACT:
A method for fabricating a CMOS image sensor includes providing a substrate having a sensor array region and a peripheral region defined thereon, forming at least a contact pad on the substrate of the peripheral region, forming a first dielectric layer covering the contact pad on the substrate, performing a first etching process to expose the contact pad and to form a step height, forming an optical shielding layer on the first dielectric layer, forming a plurality of color filters on the first dielectric layer, sequentially forming a planarizing layer and a plurality of micro-lenses on the first dielectric layer.

REFERENCES:
patent: 6379992 (2002-04-01), Jo
patent: 6617189 (2003-09-01), Chen et al.
patent: 6646808 (2003-11-01), Li
patent: 6667212 (2003-12-01), Shiraiwa
patent: 6803291 (2004-10-01), Fu
patent: 2007/0065731 (2007-03-01), Ishiwata

Affiliated with

Also associated with

Rating

Methods for fabricating a CMOS image sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for fabricating a CMOS image sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for fabricating a CMOS image sensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4202273