Methods for etching doped oxides in the manufacture of...

Details Methods for etching doped oxides in the manufacture of... Methods for etching doped oxides in the manufacture of...

2007-11-20

2007-11-20

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S757000, C438S745000

Reexamination Certificate

active

11217894

ABSTRACT:
Methods for selectively etching doped oxides in the manufacture of microfeature devices are disclosed herein. An embodiment of one such method for etching material on a microfeature workpiece includes providing a microfeature workpiece including a doped oxide layer and a nitride layer adjacent to the doped oxide layer. The method include selectively etching the doped oxide layer with an etchant comprising DI:HF and an acid to provide a pH of the etchant such that the etchant includes (a) a selectivity of phosphosilicate glass (PSG) to nitride of greater than 250:1, and (b) an etch rate through PSG of greater than 9,000 Å/minute.

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