Methods for enhancing the metal removal rate during the chemical

Details Methods for enhancing the metal removal rate during the chemical Methods for enhancing the metal removal rate during the chemical

1998-12-17

2000-10-24

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438693, 438695, 438697, H01L 21302

Patent

active

061367141

ABSTRACT:
A method for enhancing the removal rate of a metal barrier layer during CMP includes providing a semiconductor wafer having an insulator layer, a metal barrier layer formed on at least a portion of the insulation layer and a conductive layer formed thereon and contacting the semiconductor wafer with a chemical-mechanical polishing slurry containing a metal removal-enhancing amount of at least one chelating agent.

REFERENCES:
patent: 5084071 (1992-01-01), Nenadic et al.
patent: 5700383 (1997-12-01), Feller et al.
patent: 5709588 (1998-01-01), Muroyama
patent: 5735963 (1998-04-01), Obeng
patent: 5770095 (1998-06-01), Sasaki et al.
patent: 5783489 (1998-07-01), Kaufman et al.
patent: 5836806 (1998-11-01), Cadien et al.

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