Thermal measuring and testing – Temperature measurement – In spaced noncontact relationship to specimen
Reexamination Certificate
2006-06-29
2009-06-09
Verbitsky, Gail (Department: 2855)
Thermal measuring and testing
Temperature measurement
In spaced noncontact relationship to specimen
C374S002000, C374S161000, C374S005000, C356S043000, C250S338100
Reexamination Certificate
active
07543981
ABSTRACT:
Methods and apparatus for wafer temperature measurement and calibration of temperature measurement devices may be based on determining the absorption of a layer in a semiconductor wafer. The absorption may be determined by directing light towards the wafer and measuring light reflected from the wafer from below the surface upon which the incident light impinges. Calibration wafers and measurement systems may be arranged and configured so that light reflected at predetermined angles to the wafer surface is measured and other light is not. Measurements may also be based on evaluating the degree of contrast in an image of a pattern in or on the wafer. Other measurements may utilize a determination of an optical path length within the wafer alongside a temperature determination based on reflected or transmitted light.
REFERENCES:
patent: 3623813 (1971-11-01), Hacman
patent: 3672221 (1972-06-01), Well
patent: 4062623 (1977-12-01), Suzuki et al.
patent: 4342907 (1982-08-01), Macedo et al.
patent: 4448524 (1984-05-01), Brus et al.
patent: 4468136 (1984-08-01), Murphy et al.
patent: 4596466 (1986-06-01), Ulrich
patent: 4756627 (1988-07-01), Nelson
patent: 4867565 (1989-09-01), Lequime
patent: 4890933 (1990-01-01), Amith et al.
patent: 5098199 (1992-03-01), Amith
patent: 5102231 (1992-04-01), Loewenstein et al.
patent: 5118200 (1992-06-01), Kirillov et al.
patent: 5208643 (1993-05-01), Fair
patent: 5229303 (1993-07-01), Donnelly, Jr. et al.
patent: 5255286 (1993-10-01), Moslehi et al.
patent: 5263776 (1993-11-01), Abraham et al.
patent: 5381229 (1995-01-01), Murphy et al.
patent: 5388909 (1995-02-01), Johnson et al.
patent: 5467732 (1995-11-01), Donnelly, Jr. et al.
patent: 5572314 (1996-11-01), Hyman, Jr. et al.
patent: 5628564 (1997-05-01), Nenyei et al.
patent: 5683180 (1997-11-01), De Lyon et al.
patent: 5727017 (1998-03-01), Maurer et al.
patent: 5754294 (1998-05-01), Jones et al.
patent: 5773316 (1998-06-01), Kurosaki et al.
patent: 5841110 (1998-11-01), Nenyei et al.
patent: 5874711 (1999-02-01), Champetier et al.
patent: 5997175 (1999-12-01), Champetier et al.
patent: 6027244 (2000-02-01), Champetier et al.
patent: 6034357 (2000-03-01), Guardado
patent: 6054868 (2000-04-01), Borden et al.
patent: 6056434 (2000-05-01), Champetier
patent: 6062729 (2000-05-01), Ni et al.
patent: 6082892 (2000-07-01), Adel et al.
patent: 6116779 (2000-09-01), Johnson et al.
patent: 6151446 (2000-11-01), Hunter et al.
patent: 6160242 (2000-12-01), Guardado
patent: 6191392 (2001-02-01), Hauf et al.
patent: 6200023 (2001-03-01), Tay et al.
patent: 6204484 (2001-03-01), Tay et al.
patent: 6293696 (2001-09-01), Guardado
patent: 6359263 (2002-03-01), Tay et al.
patent: 6369363 (2002-04-01), Hauf et al.
patent: 6398406 (2002-06-01), Breiland et al.
patent: 6403923 (2002-06-01), Tay et al.
patent: 6426232 (2002-07-01), Litvak
patent: 6462315 (2002-10-01), Hauf
patent: 6541287 (2003-04-01), Ino et al.
patent: 6654132 (2003-11-01), Schietinger et al.
patent: 6835914 (2004-12-01), Timans
patent: 6840667 (2005-01-01), Schlagheck et al.
patent: 6891124 (2005-05-01), Denton et al.
patent: 7009695 (2006-03-01), Some
patent: 7015422 (2006-03-01), Timans
patent: 7056389 (2006-06-01), Hauf et al.
patent: 7112763 (2006-09-01), Hunter et al.
patent: 7135656 (2006-11-01), Timans
patent: 7169717 (2007-01-01), Merkl et al.
patent: 7234862 (2007-06-01), Johnson et al.
patent: 2001/0014111 (2001-08-01), Shimizu
patent: 2003/0236642 (2003-12-01), Timans
patent: 2004/0028113 (2004-02-01), Schlagheck et al.
patent: 2005/0008351 (2005-01-01), Gat et al.
patent: 2005/0063453 (2005-03-01), Camm et al.
patent: 2005/0259716 (2005-11-01), Ito et al.
patent: 2005/0271116 (2005-12-01), Ito et al.
patent: 2006/0077394 (2006-04-01), Suzuki et al.
patent: 2006/0152734 (2006-07-01), Suzuki et al.
patent: WO 0073533 (2000-12-01), None
“Influence of temperature and backside roughness on the emissivity of Si wafers during rapid thermal processing”; Authors, Vandenabeele and Maex in J. Appl. Phys. vol. 72, No. 12, (Dec. 15, 1992), pp. 5867-5875.
“Infrared absorption in silicon at elevated temperatures”; Authors, Rogne et al.; Published in Appl. Phys. Lett. 69, pp. 2190-2192 (Oct. 7, 1996).
“The Thermal Radiative Properties of Semiconductors” in the book “Advances in Rapid Thermal and Integrated Processing”, edited by F. Roozeboom (Kluwer Academic Publishers, Dordrecht, Netherlands, 1995) p. 35.
“A new optical temperature measurement technique for semiconductor substrates in molecular beam epitaxy”; Authors, Weilmeier et al.; Published, Can. J. Phys. vol. 69, 1991 p. 422-426.
“Use of SiC band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE”; Authors, R. Steins et al.; Published, Journal of Crystal Growth 272 (2004) p. 81-86.
“Temperature Measurement of Metal-Coated Silicon Wafers by Double-Pass Infrared Transmission”, Authors, Cullen et al. (IEEE Trans. Semiconductor Manufacturing 8, 346 (1995).
Search Report for Int'l Appl. No. PCT/US06/25288, date of mailing Mar. 2, 2007.
Paul J. Timans, U.S. Appl. No. 10/478,342, filed Jun. 29, 2006, Method and System for Determining Optical Properties of Semiconductor Wafers.
M. E. Adel et al., Noncontact temperature monitoring of semiconductors by optical absorption edge sensing, Proc. SPIE 1803, 290 (1992).
K. L. Saenger et al., Wavelength-modulated interferometric thermometry for improved substrate temperature measurement, Rev. Sci Instrum. 63, 3862 (1992).
R. Steins et al.,Use of SiC band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE, J. Crystal Growth 272, 81(2004).
M. K. Weilmeier et al.,A new optical temperature measurement technique for semiconductor substrates in moelcular beam epitaxy, Can J. Phys. 69, 422 (1991).
C. W. Cullen et al.,Temperature measurement of metal-coated silicon wafers by double-pass infrared transmission, IEEE Trans Semiconductor Manufacturing 8, 346 (1995).
D. Peyton et al.,Systems-oriented survey of non-contact temperature measurement techniques for rapid thermal processing, Proc. SPIE 1393, 295 (1990).
International Search Report for PCT.US07/72488 dated Jan. 9, 2009.
Dority & Manning P.A.
Mattson Technology Inc.
Verbitsky Gail
LandOfFree
Methods for determining wafer temperature does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods for determining wafer temperature, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for determining wafer temperature will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4113674