Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Patent
1997-04-15
1999-04-27
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
117208, 117213, 117900, C30B 1510
Patent
active
058977066
ABSTRACT:
An improvement in the safety, ease and speed with which the operation of attaching a crucible 1 to a support base 10 of a single crystal pulling apparatus can be completed is provided. With the method of attaching the crucible 1 to the support base 10, the support base 10 is divided into a support base bottom portion 11 and a support base drum portion 12 which is fitted to the bottom portion 11, and the crucible 1 is mounted on the support base bottom portion 11. The support base 10 is then assembled by fitting the support base drum portion 12 to the support base bottom portion 11.
Atami Takashi
Furuya Hisashi
Taguchi Hiroaki
Yamazaki Masakazu
Yanaba Michio
Hiteshew Felisa
Mitsubishi Materials Corporation
Mitsubishi Materials Silicon Corporation
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