Methods for controlling the profile of a trench of a...

Details Methods for controlling the profile of a trench of a... Methods for controlling the profile of a trench of a...

2006-10-03

2009-12-15

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

C438S640000, C438S701000, C438S736000, C438S978000, C257SE21579

Reexamination Certificate

active

07632689

ABSTRACT:
Methods for controlling the profile of a trench of a semiconductor structure comprise the step of depositing a photoresist within a via and overlying a second dielectric layer. An image layer is deposited overlying the photoresist and is patterned to form a first trench having a first width and a second width that are not equal and a first angle. The photoresist is dry etched using dry etch parameters, at least one of which is selected based on the first angle and the first and the second widths of the first trench to form a second trench in the photoresist. The second dielectric layer is etched to form a third trench.

REFERENCES:
patent: 6946391 (2005-09-01), Tsai et al.
patent: 7022602 (2006-04-01), Ruelke et al.
patent: 7235414 (2007-06-01), Subramanian et al.
patent: 2001/0027002 (2001-10-01), Matsumoto

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