Etching a substrate: processes – Forming or treating article containing magnetically...
Reexamination Certificate
2005-04-19
2005-04-19
Alanko, Anita (Department: 1765)
Etching a substrate: processes
Forming or treating article containing magnetically...
C216S041000, C216S047000, C216S072000, C216S088000, C438S003000, C438S692000, C438S696000, C438S700000, C205S663000
Reexamination Certificate
active
06881351
ABSTRACT:
A method for contacting an electrically conductive layer overlying a magnetoelectronics element includes forming a memory element layer overlying a dielectric region. A first electrically conductive layer is deposited overlying the memory element layer. A first dielectric layer is deposited overlying the first electrically conductive layer and is patterned and etched to form a first masking layer. Using the first masking layer, the first electrically conductive layer is etched. A second dielectric layer is deposited overlying the first masking layer and the dielectric region. A portion of the second dielectric layer is removed to expose the first masking layer. The second dielectric layer and the first masking layer are subjected to an etching chemistry such that the first masking layer is etched at a faster rate than the second dielectric layer. The etching exposes the first electrically conductive layer.
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Butcher Brian R.
Durlam Mark A.
Grynkewich Gregory W.
Kyler Kelly
Smith Kenneth H.
Alanko Anita
Freescale Semiconductor Inc.
Ingrassia Fisher & Lorenz
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