Methods for compound semiconductor crystal growth from solution

Details Methods for compound semiconductor crystal growth from solution Methods for compound semiconductor crystal growth from solution

1994-12-19

1996-03-19

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having growth from a solution comprising a solvent which is...

117 81, 117922, C30B 2804

Patent

active

054996007

ABSTRACT:
A crystal solution growth method for growing a crystal by providing a temperature difference between the higher and lower regions of a solvent, and disposing a source crystal at a high temperature region of the solution and a seed crystal at a low temperature region of the solution. The crystal solution growth method includes the steps of: placing the seed crystal on a recess of a heat sink, the heat sink being disposed under the solvent and the recess being defined on the top surface of the heat sink; placing a seed stopper on the seed crystal to fix the seed crystal, the seed stopper having a tubular part with an inner diameter generally same as the seed crystal and a seed crystal fixing part for fixing the seed crystal formed at one end of, the tubular part on the seed crystal side; and forming a temperature difference between the higher and lower regions of the solvent and growing a crystal oil the surface of the seed crystal.

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