Methods for chemical mechanical planarization and for...

Details Methods for chemical mechanical planarization and for... Methods for chemical mechanical planarization and for...

2006-06-23

2009-11-24

Alanko, Anita K (Department: 1792)

Etching a substrate: processes

Nongaseous phase etching of substrate

With measuring, testing, or inspecting

C216S088000, C438S010000, C438S017000, C438S692000

Reexamination Certificate

active

07622052

ABSTRACT:
Methods are provided for chemical mechanical planarization of a layer and for determining the endpoint of a CMP operation. In accordance with one embodiment the method for determining an endpoint comprises making a plurality of eddy current thickness measurement of the layer being planarized, each of the plurality of measurements spaced apart by a predetermined length of time. A difference is calculated between sequential ones of the plurality of eddy current measurements, and a predetermined minimum threshold for the difference is set. The endpoint is defined as a calculated difference less than the predetermined minimum threshold.

REFERENCES:
patent: 5659492 (1997-08-01), Li et al.
patent: 5777739 (1998-07-01), Sandhu et al.
patent: 6004187 (1999-12-01), Nyui et al.
patent: 6276987 (2001-08-01), Li et al.
patent: 6402589 (2002-06-01), Inaba et al.
patent: 6953382 (2005-10-01), Korovin et al.
patent: 7086927 (2006-08-01), Moore et al.
patent: 7115017 (2006-10-01), Laursen et al.
patent: 7160739 (2007-01-01), Shanmugasundram et al.
patent: 7189140 (2007-03-01), Shugrue et al.
patent: 7264537 (2007-09-01), Laursen et al.
patent: 2006/0286904 (2006-12-01), Swedek et al.
patent: 2008/0071414 (2008-03-01), Fujita et al.

Affiliated with

Also associated with

Rating

Methods for chemical mechanical planarization and for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for chemical mechanical planarization and for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for chemical mechanical planarization and for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4122918