Methods for calculating the voltage induced in a device

Details Methods for calculating the voltage induced in a device Methods for calculating the voltage induced in a device

2005-10-04

2005-10-04

Barlow, John (Department: 2863)

Data processing: measuring, calibrating, or testing

Measurement system in a specific environment

Electrical signal parameter measurement system

C702S072000, C716S030000

Reexamination Certificate

active

06952654

ABSTRACT:
Methods are disclosed for calculating the amount of voltage coupled to a device. In some embodiments, the method may comprise identifying a conductor that is coupled to a device, extracting information regarding the relationship between the conductor coupled to the device and adjacent conductors, extracting information regarding signals that are present in the adjacent conductors, partitioning the signal information into phases, calculating a voltage induced in the conductor coupled to the device during each phase of the partitioned signal, calculating an average voltage induced in the conductor coupled to the device and, flagging the device if the average voltage induced is above a predetermined threshold.

REFERENCES:
patent: 6011508 (2000-01-01), Perreault et al.
Ernst Y. Wu et al.; “Experimental Evidence of TBD Power-Law for Voltage Dependence of Oxide Breakdown in Ultrathin Gate Oxides”; IEEE Transactions on Electron Devices, vol. 40, No. 12, Dec. 2002 (pp. 2244-2253).

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