Methods for and applications of making buried structures in semi

Details Methods for and applications of making buried structures in semi Methods for and applications of making buried structures in semi

1996-10-16

1998-10-13

Tsai, Jey

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 89, 438158, 438487, H01L 2100, H01L 2184

Patent

active

058211357

ABSTRACT:
A transparent substrate as formed on its front side a layer of amorphous silicon. A laser beam is used to irradiate through the backside of the transparent substrate in order to form buried nucleation sites within the amorphous silicon. The buried nucleation sites which are used as nucleation seeds are then used during a front side crystallization process in order to form large single silicon crystals over the substrate surface.

REFERENCES:
patent: 4341569 (1982-07-01), Yaron et al.
patent: 5013670 (1991-05-01), Arikawa et al.
patent: 5358925 (1994-10-01), Connell et al.
patent: 5366926 (1994-11-01), Mei et al.
patent: 5407845 (1995-04-01), Nasu et al.

Affiliated with

Also associated with

Rating

Methods for and applications of making buried structures in semi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for and applications of making buried structures in semi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for and applications of making buried structures in semi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-312784