Data processing: structural design – modeling – simulation – and em – Simulating electronic device or electrical system – Circuit simulation
Reexamination Certificate
2006-12-12
2006-12-12
Rodriguez, Paul L. (Department: 2123)
Data processing: structural design, modeling, simulation, and em
Simulating electronic device or electrical system
Circuit simulation
C716S030000, C716S030000, C716S030000, C327S534000
Reexamination Certificate
active
07149674
ABSTRACT:
A method of improving performance of a dual Vtintegrated circuit is disclosed in which a first value is calculated for each transistor of the integrated circuit that has a first threshold voltage level. The first value is based at least in part on delay and leakage of the circuit calculated as if the corresponding transistor had a second threshold voltage level. One transistor is then selected based on the first values. The threshold voltage of the selected transistor is then set to the second threshold voltage level. The area of at least one transistor within the circuit is modified, and the circuit is then sized to a predetermined area. The process may then be repeated if the circuit performance fails to meet a defined constraint. In one embodiment, the performance determination includes calculating the leakage current of a set of DC-connected components into which the circuit is partitioned, determining dominant logic states for each of the components, estimating the leakage of each of these dominant logic states, and summing the weighted averages of these dominant components based on state probabilities.
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Adelman Judah L.
Blaauw David T.
Dharchoudhury Abhijit
Edwards Timothy J.
Moshe David
Chiu Joanna G.
Freescale Semiconductor Inc.
Rodriguez Paul L.
Thangavelu Kandasamy
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