Methods, devices, and systems for dealing with threshold...

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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C365S185200, C365S185210, C365S185240

Reexamination Certificate

active

08077515

ABSTRACT:
The present disclosure includes methods, devices, and systems for dealing with threshold voltage change in memory devices. A number of embodiments include an array of memory cells and control circuitry having sense circuitry coupled to the array. The control circuitry is configured to determine changes in threshold voltages (Vts) associated with the memory cells without using a reference cell, and adjust the sense circuitry based on the determined changes and without using a reference cell.

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