Methods and systems for read-only memory

Details Methods and systems for read-only memory Methods and systems for read-only memory

2006-11-28

2008-12-16

Lam, David (Department: 2827)

Static information storage and retrieval

Read only systems

C365S063000, C365S051000

Reexamination Certificate

active

07466578

ABSTRACT:
One embodiment of the present invention relates to a read only memory (ROM) that includes a memory cell pair. The memory cell pair includes a first memory cell and a second memory cell that share a common drain that is associated with the memory cell pair. The memory cell also includes a bitline configured to provide data from the first and second memory cells, wherein the bitline is electrically isolated from the common drain. Other methods and systems are also disclosed.

REFERENCES:
patent: 5351255 (1994-09-01), Schetzina
patent: 5742540 (1998-04-01), Wakasugi et al.
patent: 6879509 (2005-04-01), Evans et al.
patent: 2002/0039305 (2002-04-01), Becker
“Numerical Analysis of the Effect of Coating Microstructure on Three-Dimensional Crack Propagation in the Coating Under Rolling Contact Fatigue Conditions”, I. A. Polonsky and L. M. Keer, Transactions of the ASME, Journal of Tribology, vol. 124, Jan. 2002, 6 pgs.
“Tribological properties and folling-contct-fatigue lives of TiN/SiNxmultilayer coatings”, Yu-Hsia Chen, Igor A. Polonsky, Yip-Wah Chung and Leon M. Keer, Elsevier Science, Sruface and Coatings Technology 154 (2002) pp. 152-161.

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