Methods and systems for laser machining a substrate

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S977000, C438S460000, C257SE21482

Reexamination Certificate

active

08048774

ABSTRACT:
A formation in a first surface of a substrate is machined by an ultraviolet or visible radiation laser, to a predetermined depth that is less than a full depth of the substrate; and material is removed from a second surface of the substrate opposed to the first surface to the predetermined depth from the first surface to communicate with the formation. Material may be removed by, for example, lapping and polishing, chemical etching, plasma etching or laser ablation. The invention has application in, for example, dicing semiconductor wafers to forming metallised vias in wafers.

REFERENCES:
patent: 4023280 (1977-05-01), Schneider
patent: 5217916 (1993-06-01), Anderson et al.
patent: 5397420 (1995-03-01), Sakakibara et al.
patent: 5597767 (1997-01-01), Laurinda et al.
patent: 5614114 (1997-03-01), Owen
patent: 5646067 (1997-07-01), Gaul
patent: 5691248 (1997-11-01), Howell et al.
patent: 5737818 (1998-04-01), Frank et al.
patent: 6004867 (1999-12-01), Kim et al.
patent: 6074896 (2000-06-01), Dando
patent: 6245587 (2001-06-01), Vallett
patent: 6507092 (2003-01-01), Fukasawa et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Methods and systems for laser machining a substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods and systems for laser machining a substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods and systems for laser machining a substrate will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4278972

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.