Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2002-10-01
2011-11-01
Nguyen, Thanh (Department: 2893)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C438S977000, C438S460000, C257SE21482
Reexamination Certificate
active
08048774
ABSTRACT:
A formation in a first surface of a substrate is machined by an ultraviolet or visible radiation laser, to a predetermined depth that is less than a full depth of the substrate; and material is removed from a second surface of the substrate opposed to the first surface to the predetermined depth from the first surface to communicate with the formation. Material may be removed by, for example, lapping and polishing, chemical etching, plasma etching or laser ablation. The invention has application in, for example, dicing semiconductor wafers to forming metallised vias in wafers.
REFERENCES:
patent: 4023280 (1977-05-01), Schneider
patent: 5217916 (1993-06-01), Anderson et al.
patent: 5397420 (1995-03-01), Sakakibara et al.
patent: 5597767 (1997-01-01), Laurinda et al.
patent: 5614114 (1997-03-01), Owen
patent: 5646067 (1997-07-01), Gaul
patent: 5691248 (1997-11-01), Howell et al.
patent: 5737818 (1998-04-01), Frank et al.
patent: 6004867 (1999-12-01), Kim et al.
patent: 6074896 (2000-06-01), Dando
patent: 6245587 (2001-06-01), Vallett
patent: 6507092 (2003-01-01), Fukasawa et al.
Boyle Adrian A.
Meignan Oonagh
Electro Scientific Industries Inc.
McDonnell Boehnen & Hulbert & Berghoff LLP
Nguyen Thanh
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