Methods and systems for fabricating electrical connections...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

Reexamination Certificate

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C257S762000, C257S750000, C257S632000, C257S643000, C257S644000, C257S650000, C257S774000

Reexamination Certificate

active

06888224

ABSTRACT:
Low-k dielectric materials have desirable insulating characteristics for use in insulating sub micron conductors in semiconductor devices. However, certain physical and material characteristics of the low-k dielectric materials make them difficult to work with. More particularly, the soft, porous, leakage-prone characteristics of low-k materials makes it difficult to accommodate electrical contacts for electrical probing to conductors covered by such materials. The present invention provides methods and structures for facilitating the electrical probing of semiconductor device conductors insulated by overlying low-k layers of dielectric material.

REFERENCES:
patent: 6514881 (2003-02-01), Coffman

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