Methods and systems for characterizing semiconductor materials

Details Methods and systems for characterizing semiconductor materials Methods and systems for characterizing semiconductor materials

2005-07-12

2009-08-25

Geisel, Kara E (Department: 2877)

Optics: measuring and testing

Dimension

Thickness

C356S300000, C702S189000

Reexamination Certificate

active

07580138

ABSTRACT:
Methods for determining parameters of a semiconductor material, in particular non-classical substrates such as silicon-on-insulator (SOI) substrates, strained silicon-on-insulator (sSOI) substrates, silicon-germanium-on-insulator (GOI) substrates, and strained silicon-germanium-on-insulator (sGeOI) substrates. The method provides steps for transforming data corresponding to the semiconductor material from real space to reciprocal space. The critical points are isolated in the reciprocal state and corresponding critical energies of the critical points are determined. The difference between the critical energies may be used to determine a thickness of a layer of the semiconductor material, in particular, a quantum confined layer.

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