Methods and structures for critical dimension and profile...

Details Methods and structures for critical dimension and profile... Methods and structures for critical dimension and profile...

2007-04-24

2007-04-24

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

C438S014000, C257S048000, C257SE21525

Reexamination Certificate

active

10949037

ABSTRACT:
Methods and structures for critical dimension or profile measurement are disclosed. The method provides a substrate having periodic openings therein. Material layers are formed in the openings, substantially planarizing a surface of the substrate. A scattering method is applied to the substrate with the material layers for critical dimension (CD) or profile measurement.

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Abstract Translation of Taiwan 90126146 at http://www.tipo.gov.tw/eng/howto/prenshownet.asp?print=true&no=161885&q=&kw=kw. . . Jul. 7, 2004, 1 page.
Abstract Translation of Taiwan 90126146 at http://www.delphion.com/details?pn=TW00516147B—Jul. 7, 2004, 1 page.

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