Methods and procedures for engineering of composite...

Details Methods and procedures for engineering of composite... Methods and procedures for engineering of composite...

2007-02-27

2007-02-27

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE23160, C438S644000, C438S654000, C438S957000

Reexamination Certificate

active

10122643

ABSTRACT:
A composite film comprised of three layers is formed by ALD on a substrate with a substrate interface surface. A first layer is coupled to the substrate interface surface. The first layer provides adhesion to the substrate interface surface and initiation of layer by layer ALD growth. A second layer is positioned between the first and third layers and provides a conducting diffusion barrier between the substrate and subsequent overlaying film. A third layer has a surface that is configured to provide adhesion and a texture template in preparation for a subsequent overlaying film. The composite engineered barrier structures are applied to interconnect, capacitor and transistor applications.

REFERENCES:
patent: 6146742 (2000-11-01), Hsieh et al.
patent: 6482733 (2002-11-01), Raaijmakers et al.
patent: 6664186 (2003-12-01), Callegari et al.
patent: 6727169 (2004-04-01), Raaijmakers et al.
patent: 2003/0057553 (2003-03-01), DelaRosa et al.
patent: 2004/0130029 (2004-07-01), Raaijmakers et al.
patent: 2005/0145959 (2005-07-01), Forbes et al.

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