Static information storage and retrieval – Format or disposition of elements
Reexamination Certificate
2008-05-13
2008-05-13
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Format or disposition of elements
C257S104000, C257S050000, C257S209000, C257S211000
Reexamination Certificate
active
11494397
ABSTRACT:
A memory structure includes a memory storage element electrically coupled to a control element. The control element comprises a tunnel-junction device. The memory storage element may also comprise a tunnel-junction device. Methods for fusing a tunnel-junction device of a memory storage element without fusing a tunnel-junction device of an associated control element are disclosed. The memory storage element may have an effective cross-sectional area that is greater than an effective cross-sectional area of the control element. A reference element comprising a tunnel-junction device may be used with a current source to fuse a memory storage element without fusing a tunnel-junction device of an associated control element. Methods of making the memory structure and using it in electronic devices are disclosed.
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Ellenson James E.
Fricke Peter
Van Brocklin Andrew L.
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