Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-03-28
2006-03-28
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185050, C365S185180, C365S185290, C365S072000, C365S230060
Reexamination Certificate
active
07020024
ABSTRACT:
A flash memory can operate by providing a first voltage level from a row decoder to a wordline associated with a cell of a flash memory device. An address provided to the row decoder is decoded during an erase mode operation of the flash memory. The first voltage level is increased to a second voltage level provided from the row decoder to the wordline responsive to determining that the wordline is not selected by the address during the erase mode operation.
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Myers Bigel & Sibley Sajovec, PA
Nguyen Viet Q.
Pham Ly Duy
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